| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is to use a photoresist film as a passivation film at an etching process by forming a drain after forming a source, thereby increasing the reliability and productivity thereof. CONSTITUTION: A tunnel oxide film(13), the first polysilicon film(14), an ONO film(silicon oxide film/silicon nitride film/silicon oxide film)(15), the second polysilicon film(16), a tungsten silicide layer(17), and an anti-reflective film(18) are subsequently deposited on a substrate(10) with a cell region(12) and a peripheral region(11) defined. The substrate is carried out through an etching process to form a gate(30) of a transistor on the peripheral region, and to expose the ONO film on which a source of the cell region is to be formed. When the ONO film is removed by the etching process using a gate mask(21), the peripheral region is close to the first and second polysilicon films. After the substrate is carried out through a hard bake without removing the gate mask, the source region is completely opened by an etching process using a photoresist pattern(22).
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