| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is to eliminate a removing process of natural oxide after formation of polysilicon layer and to bring the polysilicon layer or tungsten silicide in contact with a nitride layer or oxide thin film or spacer polysilicon layer, thereby preventing a water-mark and a bridge. CONSTITUTION: A gate oxide layer(33), a polysilicon layer(34) and a CVD(chemical vapor deposition) thin film(35) are successively deposited on a semiconductor substrate(31) where an isolation layer(32) is formed. A photolithography process is implemented to the resultant layer to form a photoresist pattern. A spacer polymer is formed on the sidewall of the photoresist pattern, and then the CVD thin film is removed by dry etching. A tungsten silicide layer(38) and a top oxide layer(39) are deposited on the patterned CVD thin film after the spacer polymer and the photoresist pattern are removed. The top oxide layer, the tungsten silicide layer, the CVD thin film, polysilicon layer and the gate oxide layer are etched to form a gate electrode(30). After depositing an insulating material on the resultant, a spacer insulator(40) is formed on both sidewalls of the gate electrode.
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