| 摘要 |
PURPOSE: A method for manufacturing an insulating layer of a semiconductor device is provided to prevent diffusion of impurities of an interlayer dielectric to a specific region of a semiconductor device by forming a thin diffusion barrier. CONSTITUTION: A substrate(1) formed with a semiconductor device(3) is loaded on a deposition system. A high-temperature/low-pressure oxide layer(4) and a NO layer(6) are deposited sequentially on a whole surface of the semiconductor device(3) by using the same reaction gas. The substrate(1) is unloaded from the deposition system. A BPSG layer(5) as an interlayer dielectric is deposited on an upper portion of the substrate(1). In the depositing process, Si(C2H5O)4, O2, N2 are used as the reaction gas. The high temperature and low pressure oxide layer(4) is formed under a temperature of 680 degrees centigrade. The NO layer(6) is formed under a temperature of 1000 degrees centigrade.
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