METHOD OF FLATTENING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A flattening method for semiconductor device is provided to enhance insulation features among devices by forming a polymer insulation film while increasing polishing speed. CONSTITUTION: Conductive lines(23) are formed on a semiconductor substrate(21). A polymer insulation film(25) is formed on the whole surface. The polymer insulation film(25) is heat-treated using nitride. The heat treatment is performed for 5 to 50 minutes at 200 to 500deg.C under nitride atmosphere. Boron, Phosphorous or Arsenic ion is injected to the polymer insulation film(25). C-B, P or As-H bonding is formed to have larger polishing speed than C-H bonding in the polymer insulation film(25). The polymer insulation film(25) is flattened through Chemical Mechanical Polishing using acid slurry of pH 2 to 6 and a polishing material with size of 0.03 to 0.7 microns.