PRETREATMENT PROCESS FOR PLASMA IMMERSION ION IMPLANTATION

摘要

PURPOSE: A pretreatment process for plasma immersion ion implantation is provided to implant dopant ions into a surface of a substrate having an organic photoresist mask thereon. CONSTITUTION: Ions are implanted into a substrate having a photoresist(P) by plasma immersion ion implantation method. In this method, first gas is ionized in a processing chamber(12) to generate electrically inactive ions which are caused to react on the photoresist to generate an emission gas substance and that gas substance is discharged constantly from the processing chamber(12) so that it is not ionized. Furthermore, second gas is ionized in the processing chamber(12) to generate electrically active ions and ion species thereof charged positively are implanted into the surface of the substrate. Since the photoresist is hardened prior to ion implantation, gas is ionized in the processing chamber to generate positive ions and electrons. Electrons are attracted first to the substrate and positive ions are implanted into the substrate after the photoresist is hardened thus preventing gas emission of photoresist.