| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is to form a register using a conductive layer that is used as a plate electrode and to form a polysilicon layer in a shape of spacer under a contact of metal interconnect using a conductive layer that is used as a storage electrode, to reduce contact resistance between the register and the metal interconnect, improving yields and reliability of the device. CONSTITUTION: The first interlayer dielectric pattern having the first contact hole, which exposes a portion to be a contact of a register, is formed on a semiconductor substrate(11). The first conductive layer spacer(15) is formed on a sidewall of the first contact hole. A dielectric(17) is formed on the entire structure. The second conductive layer is formed on the dielectric. The second conductive layer is etched to form a register, using an etching mask for protecting a portion to be a register. On the entire structure is formed the second interlayer dielectric(21) to planarize the entire structure. The register is etched to form the second contact hole for exposing the dielectric. A metal interconnect(23) is formed which is then buried in the second contact hole.
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