| 摘要 |
PURPOSE: A metal line forming method in a semiconductor device is provided to prevent loss of a tungsten plug in metal etching by having a double layer structure through layering a TiN layer in the cap shape on the tungsten plug. CONSTITUTION: An insulation material(3) is deposited on a lower metal layer(1) and a contact is formed, then a glue layer(5) is formed on the upper surface and a tungsten is deposited to form a tungsten plug. The tungsten is etched back to remove a tungsten layer in the front of a wafer with the glue layer(5) remaining on the upper surface. A TiN is sputtered on the insulation material(3), the glue layer(5) and the remaining tungsten(7) to form a capping deposition layer(11). The upper part of the tungsten plug is sufficiently filled. A metal Chemical Mechanical Polishing (CMP) is carried out to remove the capping deposition film(11) and the glue layer(5) to form a plugging structure as a W/TiN double film structure.
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