METHOD OF REMOVING POLYMER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of removing polymer is provided to be capable of preventing polymer remnant being an oxide film from being made when patterning a polysilicon film. CONSTITUTION: A polysilicon film is formed on a semiconductor substrate(20) on which an insulation oxide film(21) is formed. A gate electrode(22) is formed by patterning a part of the polysilicon film. A gate oxide film(23) is formed on the insulation oxide film(21), and a polysilicon film(24) for a channel and a contact line is formed on the gate oxide film(23). An offset region is formed by performing a blanket ion implantation process. After forming a source region, a drain region, and a contact line, the polysilicon film(24) is patterned so as to remain only at a corresponding cell region. A gas containing F is added in a gas for etching the polysilicon film(24).