| 摘要 |
PURPOSE: A mask is provided to enable abnormality of each of focus and doze in an exposure process for forming a photoresist pattern. CONSTITUTION: A mask is constituted by a transparent substrate, an isolated pattern(A) on the transparent substrate for measuring focus and doze abnormality, and isolated area(B) on the transparent substrate. The isolated area(B) is separated from the isolated pattern(A), and has a light transparent area for measuring focus and doze abnormality. The isolated pattern(A) is composed of two perpendicularly intersecting line patterns. The isolated area(B) has the shape of two perpendicularly intersecting lines. The critical dimensions of the isolated pattern(A) and the isolated area(B) are reduced out of the optimum focus. At the increase of doze, the critical dimension of isolated pattern(A) is reduced, and the critical dimension of the isolated area(B) is increased.
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