| 摘要 |
PURPOSE: A method of manufacturing CMOS transistor is provided to prevent a mutual diffusion between PMOS and NMOS transistors and to improve an electric property by making remnants from remaining at a PMOS region. CONSTITUTION: A field oxide film(41) is formed on a semiconductor substrate(40) where NMOS and PMOS regions are defined, and a gate insulation film(42) and an undoped polysilicon film(43) are formed on an entire surface of the substrate. An N-type polysilicon film and a P-type polysilicon film are formed by selectively implanting a high-concentration impurity ion on the polysilicon films on the NMOS and PMOS regions. A polisilicon film, a tungsten silicide film and a diffused reflection preventing film are sequentially formed on the N-type and P-type polysilicon films. The diffused reflection preventing film and the tungsten silicide film of a portion except for a gate electrode region are removed. NMOS and PMOS gate electrodes are formed by removing the polisilicon film, the N-type polysilicon film, and the P-type polysilicon film using a lightly doped drain mask. After forming source and drain regions of a low concentration, a hard mask film(48) and a spacer are formed on the gate electrodes and source and drain regions of a high concentration are formed.
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