METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the yield rate and the integration degree of the semiconductor device by preventing the malfunction of a gate. CONSTITUTION: A gate electrode area is formed in a semiconductor substrate(31). A gate lower electrode(33) is formed on the semiconductor substrate(31). An LDD area(36) is formed at both sides of the gate lower electrode(33) by implanting impurity ions into the entire surface of the semiconductor substrate(31). An insulating layer sidewall is formed at both sides of the gate lower electrode. A source/drain area(38) is formed at both sides of the gate lower electrode(33) by implanting high density impurity ions. Then, an interlayer dielectric is formed on the entire surface of the structure. A wiring contact hole is formed on the source/drain area(38), while exposing the gate lower electrode(33). A metal plug layer is formed in the contact hole.