METHOD FOR FORMING DUAL GATE ELECTRODE

摘要

PURPOSE: A method for forming a dual gate electrode is provided to simplify a manufacturing process by using a self-alignment method. CONSTITUTION: An isolation layer(13) is formed on a semiconductor substrate(11). An N-well(15) and a P-well(17) are formed on an active region of the semiconductor substrate(11). The first photoresist pattern is formed by performing an exposure process and a development process. Dopants are implanted on the N-well(15). The second photoresist pattern is formed on the semiconductor substrate(11). Dopants are implanted on the P-well(17). A gate oxide layer(19) is formed on a surface of the semiconductor substrate(11). The first polysilicon(21) is formed on the whole structure. The first polysilicon(21) is etched by performing a wet etching process. The second polysilicon(23) is formed on the whole structure. A dual gate electrode is formed by forming a spacer as the second polysilicon(23).