| 摘要 |
PURPOSE: A method for forming a metal interconnection line of a semiconductor device is to break a lattice structure of a surface of an interlayer dielectric in forming a metal interconnection line by a damascene process and to form a metal interconnection line without a dishing, thereby improving characteristics and reliability of the device. CONSTITUTION: An interlayer dielectric(23) is formed on a semiconductor substrate(21). Impurities are implanted into the interlayer dielectric to break a lattice structure of the surface of the interlayer dielectric. A portion of the interlayer dielectric formed of a metal interconnection lineis etched. A metal interconnection line substance is formed on the entire structure to bury a recess in the interlayer dielectric. The metal interconnection line is so etched that a planarized metal interconnection line is formed in overetched state, thereby improving insulation characteristics thereof. The interlayer dielectric is patterned and then the lattice structure of the interlayer dielectric is broken by a post treatment process.
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