| 摘要 |
PURPOSE: A method for forming a metal interconnection line is to provide a self-aligned method, thereby improving insulation characteristics between the interconnection lines, and accurately forming width between the interconnection lines without an effect of a photolithography. CONSTITUTION: A unit device such as a transistor is formed on a silicon substrate. The first insulating layer(1) is formed thereon and then planarized. In consideration of the height of the interconnection line, the lower portion for the interconnection line of the first insulating layer is removed by a predetermined depth, forming a recess. Using the step difference by the recess, an interconnection substance(5) is deposited in desired width of the interconnection line on the entire structure. A sacrificial insulating layer(7) is deposited on the entire structure. A portion between the sacrificial insulating layer and the interconnection substance is etched by an etchant with same selectivity, leaving the interconnection substance only on the sidewall of the sacrificial insulating layer. The interconnection substance in an opposite sidewall of the recess is removed, and the second insulating layer is deposited thereon and then planarized.
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