| 摘要 |
PURPOSE: A focus control method is provided to automatically correct the focus in a subsequent exposure process by transferring a pattern on a wafer and then measuring the size of the pattern and the slant portion of the pattern simultaneously. CONSTITUTION: A focus control method generates an electron beam for measuring the slant of a pattern formed on a wafer to measure the slant width of the pattern(301). It is compared that the measured slant width is greater than a predetermined slant range(303). As a result of the comparison, if the measured slant width is greater than a predetermined slant range, a predetermined correction value is subtracted from the slant width measured in the step(301)(305) to calculate focus correction data(311). On the contrary, if the measured slant width is less than the predetermined slant range(307), the predetermined correction value is added to the measured slant width(309) to calculate focus correction data(311).
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