| 摘要 |
PROBLEM TO BE SOLVED: To remove metallic impurities, attached fine particles, and organic matters from the surface of a substrate in a one-time washing at a low cost. SOLUTION: An ozone gas 12 is continuously or intermittently supplied into an alkaline aqueous solution 11 of pH 8-14 such as a potassium hydroxide, sodium hydroxide, lithium hydroxide, or ammonia aqueous solution, at a rate of 1-1,000 mg per min. per 1 liter of the aqueous solution to prepare washings 10 for a semiconductor substrate. This method of cleaning a semiconductor substrate consists of a process of dipping a semiconductor substrate 13 in the prepared washings 10 for 1 to 30 min. and a process of rinsing the semiconductor substrate 13 with pure water 16.
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