METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to reduce generation of a conventional etch pit phenomenon to minimize a stress applied on a silicon substrate, by adequately forming a layout of poly 1 and a device isolation active region on the silicon substrate. CONSTITUTION: A method for manufacturing semiconductor devices makes the angle of a corner portion in an active region(1) an obtuse angle so that the final profile can be rounded upon layout of the active region on a silicon substrate.