发明名称 METHOD OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF INSPECTING PHOTOMASK
摘要 <p>PROBLEM TO BE SOLVED: To detect a phase error defect in a phase shift mask by using a device for the inspection of defects which is usually used to inspect the pattern on a photomask. SOLUTION: An interference film 6a having a different refractive index from that of a mask substrate 2 is applied on the face where the phase shifter of the phase shift mask 1A is formed, and the phase shift mask 1A as coated is irradiated with inspection light. The intensity of the transmitted light or reflected light is measured to detect the phase error defect in the phase shift mask 1A.</p>
申请公布号 JP2001183812(A) 申请公布日期 2001.07.06
申请号 JP19990365963 申请日期 1999.12.24
申请人 HITACHI LTD 发明人 HASEGAWA NORIO;HAYANO KATSUYA;HATTORI YOSHIMASA
分类号 G01B11/00;G01M11/00;G03F1/30;G03F1/68;G03F1/84;(IPC1-7):G03F1/08 主分类号 G01B11/00
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