| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a positive charge pumping voltage switching circuit in which a write-in time characteristic of a flash memory can be improved, and a row decoder circuit of a flash memory using it. SOLUTION: A positive pumping voltage switching circuit is characterized by that the circuit comprises a positive charge pumping circuit for inputting power source voltage and outputting positive charge pumping voltage in accordance with a positive charge pumping enable-signal, a switching block for inputting the power source voltage and positive charge pumping voltage and outputting pumping voltage in accordance with an enable-signal, and a switching block for outputting pumping voltage of even number and odd number in accordance with an enable-signal, an even number sector selecting signal and an odd number sector selecting signal.</p> |
