SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can prevent the increase of its chip area and can surely supply cell plate voltages to cell plates. SOLUTION: In the semiconductor storage device, dummy bit lines 7a are formed in parallel with bit lines 7 separately from the same layer as that of the bit lines 7. Capacitors 20 are formed on the bit lines 7 and have cell plates 13. Intermediate connecting wiring 15a is formed on the capacitors 20 and electrically connected to the cell plates 13 and dummy bit lines 7a.