| 摘要 |
PURPOSE: A method for manufacturing a gate electrode is provided to effectively remove polymer and photoresist residue after patterning a gate electrode by performing a cleaning process using a mixture solution of NH4ON, HF, CH3COOH and pure water without using H2O2 chemical etching W and WN. CONSTITUTION: A method for manufacturing a gate electrode forms a gate oxide film(14) on a silicon substrate(10). A conductive material including a tungsten metal is deposited on the gate oxide film. The conductive layer is patterned to form a gate electrode(G). The substrate in which the gate electrode is formed is treated by a cleaning process, where the cleaning process employs NH4ON, HF, CH3COOH and pure water.
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