| 摘要 |
PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to perform stably a metal line process by forming an interlayer dielectric as an organic polymer. CONSTITUTION: A slurry is formed by dispersing ceramic particles into an organic monomer including a carbonic double bond. An interlayer dielectric(35) is formed on a semiconductor substrate(31) by performing a spin coating process for the slurry. A high organic polymer is formed by polymerizing organic monomers between the ceramic particles. A hydrophobic interlayer dielectric(35) is formed by performing a thermal process for the semiconductor substrate(31) on a hot plate to evaporate a solvent from the interlayer dielectric(35).
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