| 摘要 |
PURPOSE: A method for forming an isolation layer is to improve the characteristic and reliability of the semiconductor device by forming an insulating layer spacer on a trench sidewall so that salicide is not formed on the isolation layer. CONSTITUTION: An isolation layer(A) is formed in a semiconductor substrate(100) to define an active region. A polysilicon gate electrode(B,C) is formed by depositing and patterning a gate oxide layer and a polysilicon layer on the semiconductor substrate. An LDD region is formed by forming an insulating spacer layer(D) and a source/drain junction region(E), through an impurity implantation process. A stop layer is formed on the entire structure so that salicide is not formed on the insulating layer. An insulating spacer is formed on the isolation layer by anisotropy etching. A metal layer is deposited on the entire structure. A salicide layer(I) is formed by performing the first annealing process, a wet etching process, the second annealing process in this order.
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