| 摘要 |
PURPOSE: A semiconductor memory device is provided to form a bit line having a structure of a bit line, a bit line bar, a bit line bar, and a bit line by forming an isolation layer with a predetermined angle. CONSTITUTION: An isolation layer for defining an active region is formed on a semiconductor substrate. The isolation layer is formed as a trench type. the active region has an angle of 22-24 degrees to an X direction. A word line(17) is formed on an upper portion of the semiconductor substrate. A bit line(19) perpendicular to the word line(17) is formed on the semiconductor substrate. Accordingly, a coupling noise is reduced by forming the bit line of orders of a bit line, a bit line, a bit line bar, a bit line bar, a bit line, and a bit line when an arbitrary word line is operated.
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