METHOD FOR FORMING PHOTORESIST CAPABLE OF REDUCING DIFFERENCE OF DIFFUSION LENGTH OF H+ CAUSED BY DIFFERENCE OF EXPOSURE AREA

摘要

PURPOSE: A method for forming a photoresist is provided to reduce the difference of a diffusion length of H+ by reducing the difference of density of H+ in first and second exposure area. CONSTITUTION: A photoresist is coated on an upper surface of a semiconductor substrate. Then, the first exposure process is carried out so as to expose the first area of the photoresist. The first developing process is carried out to reduce the thickness of the photoresist formed in the first area. Then, the second exposure process is carried out so as to simultaneously expose the first and second areas. After that, the second developing process is carried out. The photoresist includes a photo acid generator. The photoresist is exposed by using a DUV.