METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is to improve the characteristic of a cell transistor by implanting hydrogen into a cell. CONSTITUTION: The first interlayer dielectric(16) is formed on a semiconductor substrate(10) with a predetermined lower structure. The first interlayer dielectric has a plug ploy(15). The lower structure consists of an isolation insulating layer(11), a gate electrode(12), and a source/drain region(14). A bit line(17) is formed to be connected with the plug poly. The second interlayer dielectric(18) is formed on the entire structure. A storage electrode contact hole is formed to expose a storage electrode forming region of the plug poly. A storage electrode(19) is formed to be connected with the plug poly through the storage electrode contact hole. Then, a dielectric layer(20) and a plate electrode are formed on the storage electrode in this order. An HSG(hemi spherical glass)(22) is formed on plate electrode by using SiH4 gas within a low pressure chemical vapor deposition chamber. The HSG layer has a thickness of 300 to 400 angstroms.