| 摘要 |
PURPOSE: A method for manufacturing a bipolar transistor is to minimize a surface area and resistance value of a base region, thereby satisfying a high-speed operation. CONSTITUTION: An epitaxial layer(23) is formed on a substrate with a buried layer(22)formed, and an isolation region(24) is formed around the epitaxial layer. A buffer layer(25) is formed on the entire surface of the substrate, and after a mask is formed on the buffer the epitaxial layer is implanted with the first type of high concentration impurity ion through the buffer layer to form a collector region(27). After the mask is removed, a base mask is formed on the buffer layer, and the epitaxial layer is selectively implanted with the second type of impurity ion through the buffer to form a base region. After the base mask is removed, a polysilicon layer is formed on a portion of the collector region and base region, thereby defining an emitter region(30) and a collector contact region(31). A metallic material is deposited on the substrate, and is selectively etched to form a base electrode(33), an emitter electrode(32), and a collector electrode(34).
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