| 摘要 |
PROBLEM TO BE SOLVED: To provide a device simulation method by which the quantum effect of an inverted layer in a high-grate voltage area can be expressed better. SOLUTION: In the device simulation method containing a step of correcting the potential used in an electric charge preserving formula with the expanding amount of the band gap corresponding to the quantum effect of the inverted layer, one or two or more terms expressing the perturbation of primary or higher-order energy caused by an electric field perpendicular to the interface between a semiconductor and an insulating film when the term expressing the expanding amount obtained from the calculating formula of a van Dort model is regarded as the perturbation of the zero-order energy caused by the electric field perpendicular to the interface between the semiconductor and insulating film is added to the term expressing the expanding amount from the calculating formula of the van Dort model and the sum is used as the expanding amount.
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