MANUFACTURING METHOD OF CONTACT STRUCTURE

摘要

PROBLEM TO BE SOLVED: To obtain a contact structure while ensuring flatness without generating void in a layer insulation film. SOLUTION: A substrate 1 and a first layer insulation film 21 consisting of a p-TEOS covering a wiring 4 formed on the substrate 1 are deposited. Thereafter, a second layer insulation film 22 of application glass is formed by an SOG method. The second layer insulation film 22 is etched by etching back from an opposite side to the substrate 1. Etching is stopped when a surface 21a of the first layer insulation film 21 is exposed above the wiring 4 and flatness is ensured. Thereafter, a third insulation film 23 is laminated on the second insulation film 22 and an opening 51 is shaped by carrying out isotropic etching to the third insulation film 23 in an upper part of the wiring 4. In the process, the isotropic etching does not attain to the second insulation film 22.