| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent the growth of a SMPS by performing a carbonate process on upper portion of sidewalls of cylindrical storage electrode, so improving yield of manufacturing. CONSTITUTION: At first, a lower dielectric layer(11) having a storage electrode contact hole is formed by using a Self Aligned Dual Damascene(SADD) method and a sacrifice dielectric layer defining a region reserved as the storage electrode is formed. Then, a conductive layer with a predetermined thickness for the storage electrode is formed on the overall surface including the dielectric layer and a photosensitive layer for flattening the surface of the conductive layer is formed. Then, the sacrifice is etched until exposed. Exposed portion of the conductive layer for the storage electrode is manipulated with carbon. Then, the photosensitive layer and the sacrifice dielectric layer are removed to form the cylindrical storage electrode whose upper portion of sidewalls is manipulated with carbon. At last, a SMPS(Selective Metastable Poly Silicon)(21) is formed on the surface of the cylindrical storage electrode in a way that is formed on the overall surface of the cylindrical storage electrode except for the portion manipulated with carbon.
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