METHOD FOR ETCHING SEMICONDUCTOR DEVICE USING CH3F GAS

摘要

PURPOSE: A method for etching a semiconductor device using CH3F gas is provided to reduce the thickness of a photoresist layer necessary for an etch process, by etching a layer to etch under the photoresist layer while hardly etching the photoresist layer on the layer to etch. CONSTITUTION: A layer to etch is formed on a semiconductor substrate(11) having a predetermined pattern. A photoresist pattern exposing a portion to etch is formed on the layer to etch. The layer to etch is etched by using a mixture gas of CH3F gas and fluorine-based gas.