| 摘要 |
<p>An interconnect structure for microelectronic devices includes a first plated through hole (PTH) via formed through a core material, and a second PTH via concentrically located inside first PTH via, but electrically isolated from the first PTH via. A method of producing the interconnect structure includes forming a first hole through a core material layer, then forming a first conductive layer on sidewalls of the first hole, and on upper and lower surfaces of the core material layer. The first hole is substantially filled with non-conductive material, and dielectric layers are formed on substantially horizontal portions of the first conductive layer, and on top and bottom surfaces of the non-conductive material. A second hole, having a smaller diameter than the diameter of the first hole, is formed through the dielectric layers and the non-conductive material in concentric relationship to the first hole. A second conductive layer is then formed on the sidewalls of the second hole, and on upper and lower surfaces of the dielectric layers.</p> |
