发明名称 |
PHASE SHIFT MASK AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A method for manufacturing a phase shift mask is provided to prevent light from being projected on the side surface of a phase shift layer, by forming a non-reflecting layer of a spacer shape on the side surface of the phase shift layer. CONSTITUTION: A phase shift material layer and a chrome layer are sequentially formed on a quartz substrate(11). The chrome layer is patterned to form chrome patterns. The phase shift material layer is etched by using the chrome patterns as an etching mask to form a phase shift layer(12) of a pattern shape. The chrome patterns are removed. A non-reflecting layer(13) is deposited on the phase shift layer and the quartz substrate. The non-reflecting layer is etched to make the non-reflecting layer being left on the side surface of the phase shift layer as a spacer shape.
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申请公布号 |
KR20010058327(A) |
申请公布日期 |
2001.07.05 |
申请号 |
KR19990062581 |
申请日期 |
1999.12.27 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HUI BEOM;YOON, HYEONG SUN |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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