| 摘要 |
<p>A TFT array substrate including pixel electrodes (14') and TFTs (16) is manufactured using two or three photomasks. The TFT includes semiconductor silicon film deposited on an insulating substrate (1); gate oxide film (4') formed on channel regions of the silicon semiconductor film; a gate electrode (5') formed on the gate oxide film (4'); metal oxide film (7) covering the surface of the gate electrode (5'); a separate source electrode (12) on the metal oxide film (7) and covering the source region and at least sides of the metal oxide film (7) on the source side; and a drain electrode (13) formed to cover the drain region and at least sides of the metal oxide film (7) on the drain side.</p> |
