| 摘要 |
A method of forming a step edge in a surface (12) of a crystalline substrate (10) is provided. The method includes forming a layer of resist (11) over the surface (12) and removing areas of the resist (11) to expose selected areas of the surface (12), thereby forming side walls (13) in the layer of the resist (11), the side walls (13) bounding the exposed areas of the surface (12). The method also includes exposing the resist (11) and substrate (10) to an ion beam (14), thereby etching the resist (11) and the exposed areas of the surface (12), and controlling the orientation and angle of incidence of the ion beam (14) with respect to the substrate (10) and the resist side walls (13) to form a step edge with desired angle and height characteristics. An angular position of the substrate (10) about an axis (15) formed by a normal to the surface (12) is controlled in order to control the step edge formation. |
