| 摘要 |
PURPOSE: A semiconductor memory device is provided to convert the voltage applied from outside into a low-level one by using a bonding option or using the original voltage as it is as an internal source voltage. CONSTITUTION: The memory device includes the predetermined number of the first source voltage application pads(10-1,10-2,10-3,10-4), the predetermined number of the second source voltage application pads(12-1,12-2,12-3,12-4), an enable signal application pad(14) and the predetermined number of internal source voltage generating circuits(20-1,20-2,20-3,20-4). The internal source voltage generating circuits convert the external voltage applied on the second source voltage application pads with response to the signal applied on the enable signal application pads into the internal source voltage and output the result. When the external voltage is converted to the internal source voltage, the first source voltage application pads are floated while the external voltage is applied on the second source voltage application pads. When the external voltage is directly used as the internal source voltage, the external voltage is applied on the first and second source voltage application pads.
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