发明名称 |
VERTICAL DIFFUSION FURNACE FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A vertical diffusion furnace for manufacturing a semiconductor device is provided to supply uniformly a gas to each wafer by forming an exhausting portion on a slot portion supporting the wafer. CONSTITUTION: A heater portion(50) forms an outer body. A reaction tube(60) is installed at an inside of the heater portion(50). The reaction tube(60) has an exhaust portion for exhausting a supplied gas. A boat(80) is installed at an inside of the reaction tube(60). The boat(80) has an upper plate(81), a lower plate(83), and a multitude of support bar(85). The support bars(85) are installed between the upper plate(81) and the lower plate(83). Slots for supporting edges of wafers are formed on the support bars(85). A guide path(85b) is formed on the boat(80) in order to guide a gas to the reaction tube(60). A boat cap(90) is formed to load the boat(80). A gas inflow path(91) is formed on the boat cap(90).
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申请公布号 |
KR20010055573(A) |
申请公布日期 |
2001.07.04 |
申请号 |
KR19990056813 |
申请日期 |
1999.12.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, MAN SU;PARK, YEON SIK;SHIN, CHUNG HWAN |
分类号 |
H01L21/22;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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