| 摘要 |
PURPOSE: A method for measuring a critical dimension in a semiconductor measuring system is provided to permit an improvement in measurement precision. CONSTITUTION: In the method for measuring the critical dimension formed on a wafer in directions of x-axis and y-axis, an electron beam is scanned over the wafer to produce an electronic image, and then an image signal is picked out from the electronic image. Next, a slop line and a base line are determined from a calculation of the image signal. Thereafter, the critical dimension is calculated individually for each axis. Particularly, each specific gradient of the x-axis and the y-axis is separately used for respective calculations of an x-axis scan and a y-axis scan. Accordingly, an error in measuring directionality can be reduced.
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