| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to simplify the process and improve the characteristic of the device by forming a halo-ion doped layer through the process of forming a gate electrode as a double layer. CONSTITUTION: A gate electrode(33) is formed on a semiconductor substrate(31). A halo ion injection region(34) is formed with no-tilt ion injection using the gate electrode as a mask. On both sides of the gate electrode, a conductive sidewall is formed with the same material to overlap a part of the halo-ion injection region. An impurity(35) of a lower density is injected, using the gate electrode including the conductive sidewall as a mask. On both sides of the gate electrode including the conductive sidewall, a gate insulation sidewall(36) is formed and an impurity(37) of a high density is injected to form a source/drain region.
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