发明名称 METHOD FOR FORMING FUSE UNIT IN SEMICONDUCTOR DEVICES
摘要 PURPOSE: A method for forming a fuse unit is provided to prevent defect caused by absorption of moisture when a reliability test is performed for a product. CONSTITUTION: A method for forming a fuse unit forms a fuse electrode(310) on a semiconductor substrate(300). Multi-layer metal layers(M1,M2,M3) are formed on a region other than a portion(b) from which the fuse electrode(310) will be cut. Multi-layer insulating films are intervened between the multi-layer metal layers(M1,M2,M3). An opening unit(B) from which the multi-layer insulating films are removed is formed on a portion(b) from which the fuse electrode(310) will be cut so that the fuse electrode(310) can be easily cut.
申请公布号 KR20010057198(A) 申请公布日期 2001.07.04
申请号 KR19990059148 申请日期 1999.12.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, HUI SIK
分类号 H01L21/82;(IPC1-7):H01L21/82 主分类号 H01L21/82
代理机构 代理人
主权项
地址