| 摘要 |
PURPOSE: A fabrication method of a semiconductor memory is provided to acquire a process margin of an etching process for exposing a capacitor plug and also to prevent problems arising from misalignment of a mask. CONSTITUTION: In the method, after a field oxide layer(2) is formed in a portion of a substrate to define a device region, pluralities of gates(3) are formed crosswise over the device region. Next, common sources and drains are formed in the device region at sides of the gates, and then a polysilicon layer is wholly deposited thereon, planarized and patterned to form the capacitor plugs(4) and the bit line plugs respectively connected to the drains and the common sources. Next, an insulating layer having contact holes exposing the bit line plugs is deposited over a resultant structure, and then a bit line(6) connected to the bit line plugs is formed thereon. Next, another insulating layer(8) is deposited over a resultant structure and patterned to expose the capacitor plugs(4). In particular, the patterned region exposing the capacitor plugs(4) is shaped like a line perpendicular to the device region.
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