发明名称 Interlocked bonding pad structures and methods of fabrication therefor
摘要 A bonding pad structure includes a first conductive layer. A first insulation layer is disposed on the first conductive layer. A conductive region is disposed on the first insulation layer, the conductive region including a conductive pad region and a plurality of conductive fingers extending from the conductive pad region through respective openings in the first insulation layer and the first conductive layer, contacting the first conductive layer along respective sidewall surfaces of the respective openings in the first conductive layer. A plurality of conductive vias may extend between the first conductive layer and the conductive pad region, interspersed amongst the plurality of conductive fingers. According to another aspect, a bonding pad includes a conductive finger extending through an opening in an insulation layer to contact the underlying conductive layer, the conductive finger having a flared portion that increases in cross-sectional area in a direction towards the substrate and that mates with a flared sidewall surface of the opening in the insulation layer. According to one embodiment, the conductive finger has a convex sidewall surface that mates with a concave sidewall surface of the opening in the insulation layer. According to another embodiment, the conductive finger has a slanted inclined sidewall surface that mates with a slanted sidewall surface of the opening in the insulation layer. Related fabrication methods are also described.
申请公布号 US6255586(B1) 申请公布日期 2001.07.03
申请号 US19990384748 申请日期 1999.08.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HARK-MOO;JEONG JIN-KOOK
分类号 H01L21/60;H01L23/485;H05K1/11;H05K3/40;(IPC1-7):H02G3/08 主分类号 H01L21/60
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