发明名称 |
METHOD FOR DEPOSITING GLASS FILM |
摘要 |
<p>PROBLEM TO BE SOLVED: To improve the method for depositing a glass film by which the refractive index and thickness are made the same over the whole of the glass film. SOLUTION: In the method for depositing a glass film by which a silicon dioxide glass film essentially consisting of silicon dioxide and containing germanium dioxide of several % to 30% is deposited on a substrate by using a sputtering method, a target used for the sputtering method is composed of silicon dioxide and germanium dioxide, and its density is controlled to 70% or more of the solid body having the same composition.</p> |
申请公布号 |
JP2001181827(A) |
申请公布日期 |
2001.07.03 |
申请号 |
JP19990360088 |
申请日期 |
1999.12.20 |
申请人 |
NTT ELECTORNICS CORP |
发明人 |
MAEDA YASUSHI;OMURA YASUMORI;MURASAWA ATSUSHI |
分类号 |
H01L21/316;C23C14/10;C23C14/34;G02B6/12;G02B6/13;G02F1/313;H01L21/203;(IPC1-7):C23C14/10 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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