发明名称 METHOD FOR DEPOSITING GLASS FILM
摘要 <p>PROBLEM TO BE SOLVED: To improve the method for depositing a glass film by which the refractive index and thickness are made the same over the whole of the glass film. SOLUTION: In the method for depositing a glass film by which a silicon dioxide glass film essentially consisting of silicon dioxide and containing germanium dioxide of several % to 30% is deposited on a substrate by using a sputtering method, a target used for the sputtering method is composed of silicon dioxide and germanium dioxide, and its density is controlled to 70% or more of the solid body having the same composition.</p>
申请公布号 JP2001181827(A) 申请公布日期 2001.07.03
申请号 JP19990360088 申请日期 1999.12.20
申请人 NTT ELECTORNICS CORP 发明人 MAEDA YASUSHI;OMURA YASUMORI;MURASAWA ATSUSHI
分类号 H01L21/316;C23C14/10;C23C14/34;G02B6/12;G02B6/13;G02F1/313;H01L21/203;(IPC1-7):C23C14/10 主分类号 H01L21/316
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