Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor

摘要

The semiconductor laser device of the present invention includes a GaAs substrate and a multi-layer structure formed on the GaAs substrate. The multi-layer structure includes an active layer for emitting light. The active layer includes an InNxAsyP1-x-y (where 0<x<1 and 0<=y<1) layer that is lattice-matched with the GaAs substrate.