| 摘要 |
PURPOSE: A resistor of a semiconductor device and a fabrication method thereof are provided to improve resistance characteristics by reducing dependence of resistance upon temperature. CONSTITUTION: The resistor includes the first semiconductor layer pattern(31) doped with n-type impurity, and the second semiconductor layer pattern(32) contacted with the first semiconductor layer pattern(31) and also doped with p-type impurity. The first and second semiconductor layer patterns(31,32) are made of polysilicon and formed on the first insulating layer(30) of a semiconductor substrate. The resistor further includes the first and second conductive plugs(34) each electrically connected to each semiconductor layer pattern(31,32) and formed in the second insulating layer(33). In particular, while the resistance of the first semiconductor layer pattern(31) doped with n-type impurity is in inverse proportion to temperature, the resistance of the second semiconductor layer pattern(32) doped with p-type impurity is in proportion to temperature. Therefore, variance of total resistance in the resistor is canceled out.
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