| 摘要 |
PURPOSE: A method for forming high temperature low pressure oxide of semiconductor device is provided to form a high temperature low pressure oxide of a semiconductor device whose surface is uniform. CONSTITUTION: A high temperature low pressure oxide(3) is deposited on a wafer(1) using a method of installing a plurality of wafers(1) on a boat and injecting a source gas into a side of the boat. Here, the temperature is 700 deg.C, and the oxide(3) has a lower step coverage at a center part. Then, after depositing the oxide(3) on the wafer, the temperature in a deposition apparatus is increased from 700 deg.C to 900 deg.C continuously. Then, by annealing the oxide(3) in the high temperature like above, the thickness of the high temperature low pressure oxide(3) becomes uniform by a flowing effect.
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