| 摘要 |
PURPOSE: A row decoder of a nonvolatile memory device is provided to improve the operation characteristics by improving a power setup time and enlarging a transferring voltage range. CONSTITUTION: A plurality of nonvolatile memory cells are arranged in a main cell(MC) array(35), and a word line switching part(31) includes more than one word line switching units(31a) to select a word line of the main cell array. A word line driver part(34) drives a word line selected by the word line switching part. And, a segment decoder driver(32) includes more than one blocks controlling on/off selectively of more than one word line switching units of the word line switching part. A well bias driver part(33) includes more than one blocks supplying n well bias of PMOS transistors constituting the word line switching units. The word line switching part comprises at least more than one word line switching units, and receives at least four signals from the word line driver part and the segment decoder driver, and an output of the word line switching part drives the word line of the cells of the main cell array.
|
