| 发明名称 |
Doping of extrinsic base of a bipolar transistor minimizes enlargement of base for improved transistor performance |
| 摘要 |
Doping of the extrinsic base of a bipolar transistor is effected in the vapor phase by putting into hot contact the region of the extrinsic base (8) with a flow of doping gas (FLX).
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| 申请公布号 |
FR2803091(A1) |
申请公布日期 |
2001.06.29 |
| 申请号 |
FR19990016283 |
申请日期 |
1999.12.22 |
| 申请人 |
STMICROELECTRONICS SA |
发明人 |
MARTY MICHEL;DUTARTRE DIDIER;CHANTRE ALAIN;FELLOUS CYRIL |
| 分类号 |
H01L21/223;H01L21/331;(IPC1-7):H01L21/223;H01L21/822 |
主分类号 |
H01L21/223 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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