| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element of a double heterojuction structure, whose light emitting efficiency is high and whose operating voltage is low. SOLUTION: The double heterojunction-type semiconductor light emitting element has, at least a sandwich structure which is composed of an n-type clad layer 4, an active layer 5 and a p-type clad layer 6 is provided, and is formed of a material whose active layer band gap energy is smaller than the band gap energy of both clad layers. A material for both clad layers is selected in such a way that the band gap energy of the n-type clad layer becomes smaller than the band gap energy of the clad layer. |
