| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing TFT that can simplify a manufacturing process and can contribute to the reduction in TAT and that in manufacturing costs. SOLUTION: In this manufacturing method of TFT, a polycrystalline silicon film 22, an insulation film 23, and a metal film 24 are continuously formed on a transparent substrate 7, then the metal film 24 is subjected to patterning and is machined for machining a gate electrode 13, the polycrystalline silicon film 22 is subjected to selective ion implantation treatment, then the insulation film 23 and the polycrystalline silicon film 22 are subjected to patterning for machining the polycrystalline silicon film 22 to a semiconductor layer 11 with a source region 8, a drain region 9, and a channel region 10, and at the same time the insulation film 23 is allowed to remain as a gate insulation film 12 on the upper surface of the polycrystalline silicon film 22.</p> |
